Electrical and magnetic interaction along a defective single-walled carbon nanotube channel

Abstract

We study the electrical and magnetic interaction in a low conduction regime for laterally as-grown defective single-walled carbon nanotube channel as functions of bias and gate voltage, combined with direct current and magnetic phase image by current-atomic force microscopy and magnetic force microscopy. For the SWNT field effect transistor at very low bias direct imaging of the current flow on the 0.9 and 2 nm diameter single-walled nanotube (SWNT) devices revealed that locally conducting islands occur along the SWNT channel, and become an origin of electrical behavior in the stage of minimal conduction. In contrast, the homogenous magnetic interaction along the as-laterally-grown individual SWNT channel observed by magnetic force measurements suggest a hint that as-grown single SWNT channel may be a reliable candidate for use in magnetoelectronics, regardless of whether clean or defective SWNT.