Local-Gating Carbon-Nanotube Transistor with Poly-Si Bottom Gates

Abstract

A carbon nanotube field-effect transistor (CNFET) over poly-Si local gates was fabricated. The highly-doped poly-Si local gates were fabricated on top of a SiO(2) layer and an individual single-wall carbon nanotube was grown over the ploy-Si gates by using chemical vapor deposition. The transport characteristics of the CNFETs were measured at low temperatures. The gate response showed typical p-type FET characteristics with both global back and local bottom gates. The gate coupling of the local gates were comparable to or even greater than that of the global back gate. By applying appropriate gate bias voltages, we could achieve complete depletion of the carriers in the conduction channel.