A zinc-oxide thin-film transistor using a spun-on dielectric and gate electrode

Abstract

This paper presents an organic-inorganic hybrid transparent thin-film transistor (TTFT) with an active channel of zinc-oxide (ZnO). The solution-processed stagger type device consists of methyl-siloxane-based spin-on glass (SOG) and poly(3,4-ethylenedioxythiophene) : poly( styrenesulfonate) (PEDOT : PSS) for the dielectric and gate electrode, respectively. The TTFT, fabricated by this method, has an optical transmittance of 67.4%, and it displays a field effect mobility of 20.65 cm(2) V-1 s(-1), an on/off ratio of > 10(4), a threshold voltage of 6.9 V and a subthreshold swing of 1.02 V/decade when the drain voltage (VDS) is 20 V.