Metal-ferroelectric-metal capacitor based persistent memory for electronic product code class-1 generation-2 uhf passive radio-frequency identification tag
DC Field | Value | Language |
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dc.contributor.author | Yoon, Bongno | - |
dc.contributor.author | Sung, Man Young | - |
dc.contributor.author | Yeon, Sujin | - |
dc.contributor.author | Oh, Hyun S. | - |
dc.contributor.author | Kwon, Yoonjoo | - |
dc.contributor.author | Kim, Chuljin | - |
dc.contributor.author | Kim, Kyung-Ho | - |
dc.date.accessioned | 2021-09-08T18:53:06Z | - |
dc.date.available | 2021-09-08T18:53:06Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-03-15 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/120424 | - |
dc.description.abstract | With the circuits using metal-ferroelectric-metal (MFM) capacitor, rf operational signal properties are almost the same or superior to those of polysilicon-insulator-polysilicon, metal-insulator-metal, and metal-oxide-semiconductor (MOS) capacitors. In electronic product code global class-1 generation-2 uhf radio-frequency identification (RFID) protocols, the MFM can play a crucial role in satisfying the specifications of the inventoried flag's persistence times (T-pt) for each session (S0-S3, SL). In this paper, we propose and design a new MFM capacitor based memory scheme of which persistence time for S1 flag is measured at 2.2 s as well as indefinite for S2, S3, and SL flags during the period of power-on. A ferroelectric random access memory embedded RFID tag chip is fabricated with an industry-standard complementary MOS process. The chip size is around 500x500 mu m(2) and the measured power consumption is about 10 mu W. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | RFID TAG | - |
dc.title | Metal-ferroelectric-metal capacitor based persistent memory for electronic product code class-1 generation-2 uhf passive radio-frequency identification tag | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Man Young | - |
dc.identifier.doi | 10.1063/1.3055343 | - |
dc.identifier.scopusid | 2-s2.0-63749126901 | - |
dc.identifier.wosid | 000264774000029 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.105, no.6 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 105 | - |
dc.citation.number | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | RFID TAG | - |
dc.subject.keywordAuthor | CMOS integrated circuits | - |
dc.subject.keywordAuthor | ferroelectric capacitors | - |
dc.subject.keywordAuthor | ferroelectric storage | - |
dc.subject.keywordAuthor | radiofrequency identification | - |
dc.subject.keywordAuthor | random-access storage | - |
dc.subject.keywordAuthor | UHF integrated circuits | - |
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