Simulation method for transmission-type radio-frequency single-electron transistor (RF-SET) operation by SPICE
DC Field | Value | Language |
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dc.contributor.author | Yu, Yun Seop | - |
dc.contributor.author | Oh, Jung Hyun | - |
dc.contributor.author | Kim, Hee Tae | - |
dc.contributor.author | Kim, Yong Gyu | - |
dc.contributor.author | Son, Seung Hun | - |
dc.contributor.author | Choi, Bum Ho | - |
dc.contributor.author | Hwang, SungWoo | - |
dc.contributor.author | Ahn, Doyel | - |
dc.date.accessioned | 2021-09-08T20:11:39Z | - |
dc.date.available | 2021-09-08T20:11:39Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2009-02 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/120655 | - |
dc.description.abstract | An efficient simulation method for transmission-type radio-frequency single-electron transistors (RF-SETs) is developed. By introducing equivalent circuits of propagating microwaves through RF cables, we solve the master equation for RF-SETs self-consistently by using the conventional circuit simulator SPICE together with the SET current model. By examining transmitted waves from the transmission-type RF-SET, we show that the developed method successfully reproduces the numerical reference methods (calculated selfconsistently). We also show that our method provides simple and fast ways to simulate and analyze RF-SETs even under complicated circuit geometry and in high frequencies over GHz. Based on the developed simulation method, we introduce the modulation technique to estimate the charge sensitivity of the transmission-type RF-SET. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | EFFICIENT CIRCUIT SIMULATION | - |
dc.title | Simulation method for transmission-type radio-frequency single-electron transistor (RF-SET) operation by SPICE | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, SungWoo | - |
dc.identifier.doi | 10.1088/0268-1242/24/2/025020 | - |
dc.identifier.scopusid | 2-s2.0-65549127280 | - |
dc.identifier.wosid | 000262582700021 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.2 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 24 | - |
dc.citation.number | 2 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | EFFICIENT CIRCUIT SIMULATION | - |
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