Bismuth Seed-Assisted Liquid-Phase Synthesis of Germanium Telluride Nanowires
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Myung-Ki | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.contributor.author | Ju, Byeong-Kwon | - |
dc.contributor.author | Sung, Yun-Mo | - |
dc.date.accessioned | 2021-09-08T20:23:28Z | - |
dc.date.available | 2021-09-08T20:23:28Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2009-02 | - |
dc.identifier.issn | 1528-7483 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/120694 | - |
dc.description.abstract | GeTe (GT) nanowires (NWs) were successfully synthesized using Bi seeds by a low-temperature solution-based process. Scanning electron microscopy (SEM) images show formation of straight and cylindrical shaped GT NWs together with spherical shaped Te particles. GT NWs were similar to 50-100 nm in diameter and similar to 2 mu m in length. X-ray diffraction (XRD) patterns of as-prepared samples show formation of hexagonal Te, orthorhombic GeTe, and amorphous phase in the samples. The [008] growth of orthorhombic GeTe NWs was identified using high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED). Ostwald ripening was proposed as a growth mechanism of GT NWs. Differential scanning calorimetry (DSC) results on the samples reveal an apparently decreased melting point of GT. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | MEMORY DEVICE | - |
dc.subject | GROWTH | - |
dc.subject | GE2SB2TE5 | - |
dc.subject | NANORODS | - |
dc.title | Bismuth Seed-Assisted Liquid-Phase Synthesis of Germanium Telluride Nanowires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.contributor.affiliatedAuthor | Ju, Byeong-Kwon | - |
dc.contributor.affiliatedAuthor | Sung, Yun-Mo | - |
dc.identifier.doi | 10.1021/cg800702d | - |
dc.identifier.scopusid | 2-s2.0-61749097790 | - |
dc.identifier.wosid | 000263048200046 | - |
dc.identifier.bibliographicCitation | CRYSTAL GROWTH & DESIGN, v.9, no.2, pp.938 - 941 | - |
dc.relation.isPartOf | CRYSTAL GROWTH & DESIGN | - |
dc.citation.title | CRYSTAL GROWTH & DESIGN | - |
dc.citation.volume | 9 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 938 | - |
dc.citation.endPage | 941 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Crystallography | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Crystallography | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | MEMORY DEVICE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | GE2SB2TE5 | - |
dc.subject.keywordPlus | NANORODS | - |
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