Carrier Concentration Dependence of the Electrical Behaviors of ITO Contacts on n-Type ZnO
DC Field | Value | Language |
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dc.contributor.author | Kim, Sang-Ho | - |
dc.contributor.author | Hwang, Dea-Kue | - |
dc.contributor.author | Park, Seong-Ju | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-08T20:26:49Z | - |
dc.date.available | 2021-09-08T20:26:49Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2009-02 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/120709 | - |
dc.description.abstract | We report on the carrier concentration dependence of the electrical characteristics of ITO Ohmic contacts to unintentionally doped n-ZnO (N(d) = 1.79 x 10(16) - 5.76 x 10(18) cm(-3)). For n-ZnO layers with carrier concentrations in excess of 8.04 x 10(17) cm-3, as-deposited ITO contacts produce good Ohmic behavior. However, as-deposited ITO contacts to n-ZnO with carrier concentrations less than similar to 4 x 10(17) cm(-3) yield non-Ohmic behaviors. We show that when annealed at 400 degrees C in a nitrogen ambient; the ITO contacts to ZnO (with carrier concentrations exceeding 4.08 x 10(17) cm(-3)) become Ohmic with a specific contact resistivity in the range of 8.76 x 10(-3) - 1.51 x 10(-4) Omega cm(2). Based on carrier transportation theory, we describe the carrier concentration and the annealing temperature dependence of the carrier transport mechanisms | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | EPITAXIAL LAYER | - |
dc.subject | DOPED ZNO | - |
dc.subject | RESISTANCE | - |
dc.subject | BARRIERS | - |
dc.subject | FILMS | - |
dc.title | Carrier Concentration Dependence of the Electrical Behaviors of ITO Contacts on n-Type ZnO | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.3938/jkps.54.740 | - |
dc.identifier.scopusid | 2-s2.0-62149089135 | - |
dc.identifier.wosid | 000263371300034 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.2, pp.740 - 743 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 54 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 740 | - |
dc.citation.endPage | 743 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001500055 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | EPITAXIAL LAYER | - |
dc.subject.keywordPlus | DOPED ZNO | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | BARRIERS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | Indium tin oxide | - |
dc.subject.keywordAuthor | Zinc oxide | - |
dc.subject.keywordAuthor | Electronic transport | - |
dc.subject.keywordAuthor | Ohmic contact | - |
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