TiN/Al Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes
DC Field | Value | Language |
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dc.contributor.author | Jeon, Joon-Woo | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.contributor.author | Kim, Hyunsoo | - |
dc.contributor.author | Kim, Kyung-Kook | - |
dc.date.accessioned | 2021-09-08T20:31:00Z | - |
dc.date.available | 2021-09-08T20:31:00Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2009-01-26 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/120732 | - |
dc.description.abstract | We report on the electrical properties of TiN(30 nm)/Al(200 nm) Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Both the as-deposited samples show Ohmic behaviors with contact resistivity of (6.0-7.2)x10(-4) Omega cm(2). However, annealing the samples at 300 degrees C causes the degradation of their electrical properties. Furthermore, unlike the TiN/Al contacts, the Ti/Al contacts suffer from aging degradation when exposed to air. Based on the x-ray photoemission spectroscopy and secondary ion mass spectrometry results, Ohmic formation and degradation mechanisms are briefly described and discussed. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | TI/AL CONTACTS | - |
dc.subject | LOW-RESISTANCE | - |
dc.subject | CRYSTAL-POLARITY | - |
dc.subject | MECHANISM | - |
dc.subject | AL | - |
dc.title | TiN/Al Ohmic contacts to N-face n-type GaN for high-performance vertical light-emitting diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1063/1.3073887 | - |
dc.identifier.scopusid | 2-s2.0-59349117572 | - |
dc.identifier.wosid | 000262971800047 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.94, no.4 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 94 | - |
dc.citation.number | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TI/AL CONTACTS | - |
dc.subject.keywordPlus | LOW-RESISTANCE | - |
dc.subject.keywordPlus | CRYSTAL-POLARITY | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | AL | - |
dc.subject.keywordAuthor | ageing | - |
dc.subject.keywordAuthor | aluminium | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | light emitting diodes | - |
dc.subject.keywordAuthor | ohmic contacts | - |
dc.subject.keywordAuthor | secondary ion mass spectra | - |
dc.subject.keywordAuthor | titanium compounds | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | X-ray photoelectron spectra | - |
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