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New Hot-Carrier Injection Mechanism at Source Side in Nanoscale Floating-Body MOSFETs
- Authors
- Yang, J. -W.; Harris, H. R.; Bersuker, G.; Kang, C. Y.; Oh, J.; Lee, B. H.; Tseng, H. -H.; Jammy, R.
- Issue Date
- 1월-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- FinFET; floating-body MOSFETs; hot-carrier injection (HCI); lifetime
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.30, no.1, pp.54 - 56
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 30
- Number
- 1
- Start Page
- 54
- End Page
- 56
- ISSN
- 0741-3106
- Abstract
- A new hot-carrier injection mechanism that depends on gate bias and body thickness in nanoscale floating-body MOSFETs has been identified using 2-D device simulation and hot-carrier degradation measurements. When gate voltage is sufficiently high and the body thickness is thin, the potential of the floating body is elevated due to the ohmic voltage drop at the source extension (SE), resulting in impact ionization at the SE. Hot-carrier stress with accelerated gate voltage may lead to a huge overestimation of lifetime in nanoscale floating-body MOSFETs.
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