Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN
DC Field | Value | Language |
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dc.contributor.author | Reddy, V. Rajagopal | - |
dc.contributor.author | Kim, Sang-Ho | - |
dc.contributor.author | Hong, Hyun-Gi | - |
dc.contributor.author | Yoon, Sang-Won | - |
dc.contributor.author | Ahn, Jae-Pyoung | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-08T21:15:40Z | - |
dc.date.available | 2021-09-08T21:15:40Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2009-01 | - |
dc.identifier.issn | 0957-4522 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/120876 | - |
dc.description.abstract | We report on the formation of thermally stable and low-resistance Ti/Au-based ohmic contacts to n-type GaN (4.0 x 10(18) cm(-3)) by using a W barrier layer. It is shown that the electrical characteristic of the sample is considerably improved upon annealing at 900 A degrees C for 1 min in a N-2 ambient. The contacts produce the specific contact resistance as low as 6.7 x 10(-6) Omega cm(2) after annealing. The Norde and current-voltage methods are used to determine the effective Schottky barrier heights (SBHs). It is shown that annealing results in a reduction in the SBHs as compared to that of the as-deposited sample. Auger electron spectroscopy (AES), scanning transmission electron microscopy (STEM) and X-ray diffraction (XRD) examinations show that nitride and gallide phases are formed at the contact/GaN interface. Based on the AES, STEM and XRD results, a possible ohmic formation mechanism is described and discussed. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | TI/W/AU OHMIC CONTACTS | - |
dc.title | Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Hyun-Gi | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1007/s10854-008-9586-4 | - |
dc.identifier.scopusid | 2-s2.0-58149132625 | - |
dc.identifier.wosid | 000261970500002 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.20, no.1, pp.9 - 13 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | - |
dc.citation.title | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | - |
dc.citation.volume | 20 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 9 | - |
dc.citation.endPage | 13 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | TI/W/AU OHMIC CONTACTS | - |
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