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Electrical characterizations of Neutron-irradiated SiC Schottky diodes
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ko, Geunwoo | - |
| dc.contributor.author | Kim, Hong-Yeol | - |
| dc.contributor.author | Bang, Joona | - |
| dc.contributor.author | Kim, Jihyun | - |
| dc.date.accessioned | 2021-09-08T21:16:02Z | - |
| dc.date.available | 2021-09-08T21:16:02Z | - |
| dc.date.created | 2021-06-10 | - |
| dc.date.issued | 2009-01 | - |
| dc.identifier.issn | 0256-1115 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/120878 | - |
| dc.description.abstract | Neutrons with an average energy of 9.8 +/- 0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75 x 10(11) neutron/cm(2), the Schottky barrier height, ideality factor, and the leakage Currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5 x 10(11) neutron/cm(2). In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75 x 10(11) neutron/cm(2). | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | KOREAN INSTITUTE CHEMICAL ENGINEERS | - |
| dc.subject | MOBILITY TRANSISTORS | - |
| dc.title | Electrical characterizations of Neutron-irradiated SiC Schottky diodes | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
| dc.identifier.doi | 10.1007/s11814-009-0049-2 | - |
| dc.identifier.scopusid | 2-s2.0-59349090163 | - |
| dc.identifier.wosid | 000262722500049 | - |
| dc.identifier.bibliographicCitation | KOREAN JOURNAL OF CHEMICAL ENGINEERING, v.26, no.1, pp.285 - 287 | - |
| dc.relation.isPartOf | KOREAN JOURNAL OF CHEMICAL ENGINEERING | - |
| dc.citation.title | KOREAN JOURNAL OF CHEMICAL ENGINEERING | - |
| dc.citation.volume | 26 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 285 | - |
| dc.citation.endPage | 287 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART001313159 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Chemical | - |
| dc.subject.keywordPlus | MOBILITY TRANSISTORS | - |
| dc.subject.keywordAuthor | Neutron Irradiation | - |
| dc.subject.keywordAuthor | Silicon Carbide | - |
| dc.subject.keywordAuthor | Diode | - |
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