Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes
DC Field | Value | Language |
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dc.contributor.author | Jung, Se-Yeon | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.contributor.author | Kim, Hyunsoo | - |
dc.contributor.author | Park, Kyung-Soo | - |
dc.contributor.author | Park, Jae-Gwan | - |
dc.contributor.author | Namgoong, Gon | - |
dc.date.accessioned | 2021-09-08T21:28:51Z | - |
dc.date.available | 2021-09-08T21:28:51Z | - |
dc.date.created | 2021-06-19 | - |
dc.date.issued | 2009 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/120943 | - |
dc.description.abstract | We investigate the electrical properties of Ti/Al ohmic contacts on (NH(4))(2)S(x)-passivated N-face n-GaN:Si (4.2x10(18) cm(-3)) grown by molecular beam epitaxy. It is shown that the passivation results in an increase in the photoluminescence intensity of n-GaN. Current-voltage (I-V) measurements show that the passivated samples experience a slight degradation in the electrical properties upon annealing at 300 degrees C, while the untreated samples show some improvement although still nonohmic. Based on the I-V and X-ray photoemission spectroscopy results, we describe the possible mechanisms for the passivation and annealing dependence of the electrical properties of the Ti/Al contacts to the N-face n-GaN. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | CRYSTAL-POLARITY | - |
dc.subject | SCHOTTKY DIODES | - |
dc.subject | GAAS | - |
dc.subject | SURFACE | - |
dc.subject | MECHANISM | - |
dc.title | Electrical Properties of Ti/Al Ohmic Contacts to Sulfur-Passivated N-Face n-Type GaN for Vertical-Structure Light-Emitting Diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1149/1.3126529 | - |
dc.identifier.scopusid | 2-s2.0-69149106985 | - |
dc.identifier.wosid | 000266207100030 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.7, pp.H275 - H277 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | H275 | - |
dc.citation.endPage | H277 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | CRYSTAL-POLARITY | - |
dc.subject.keywordPlus | SCHOTTKY DIODES | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordAuthor | aluminium | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | electrical conductivity | - |
dc.subject.keywordAuthor | elemental semiconductors | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | light emitting diodes | - |
dc.subject.keywordAuthor | molecular beam epitaxial growth | - |
dc.subject.keywordAuthor | ohmic contacts | - |
dc.subject.keywordAuthor | passivation | - |
dc.subject.keywordAuthor | photoluminescence | - |
dc.subject.keywordAuthor | semiconductor-metal boundaries | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | titanium | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | X-ray photoelectron spectra | - |
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