Fabrication of High Performance GaN-Based Vertical Light-Emitting Diodes Using a Transparent Conducting Indium Tin Oxide Channel Layer
DC Field | Value | Language |
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dc.contributor.author | Jeong, Hwan Hee | - |
dc.contributor.author | Lee, Sang Youl | - |
dc.contributor.author | Song, June-O | - |
dc.contributor.author | Choi, Kwang Ki | - |
dc.contributor.author | Lee, Seok-Hun | - |
dc.contributor.author | Choi, Hee Seok | - |
dc.contributor.author | Oh, Tchang-Hun | - |
dc.contributor.author | Lee, Yong-Hyun | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-08T21:32:52Z | - |
dc.date.available | 2021-09-08T21:32:52Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2009 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/120963 | - |
dc.description.abstract | We fabricate blue GaN-based vertical light-emitting diodes (LEDs) using transparent insulating SiO(2) and conducting indium tin oxide (ITO) channel layers connected to the passivation layer by a combined process of electroplated deposition and a laser lift-off technique. It is shown that unlike the SiO(2) layer, the ITO layer effectively serves as current spreading and injection layers. LEDs fabricated with the ITO channel layer exhibit a slightly higher reverse current when the voltage exceeds -10 V. However, LEDs fabricated with the ITO layer produce higher output power (by similar to 20% at 100 mA) compared to LEDs with the SiO(2) layers. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.subject | EXTRACTION EFFICIENCY | - |
dc.subject | OUTPUT | - |
dc.subject | ENHANCEMENT | - |
dc.subject | POWER | - |
dc.title | Fabrication of High Performance GaN-Based Vertical Light-Emitting Diodes Using a Transparent Conducting Indium Tin Oxide Channel Layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1149/1.3152334 | - |
dc.identifier.scopusid | 2-s2.0-67651236743 | - |
dc.identifier.wosid | 000268064500023 | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.9, pp.H322 - H324 | - |
dc.relation.isPartOf | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 12 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | H322 | - |
dc.citation.endPage | H324 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | EXTRACTION EFFICIENCY | - |
dc.subject.keywordPlus | OUTPUT | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordAuthor | electroplating | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | light emitting diodes | - |
dc.subject.keywordAuthor | passivation | - |
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