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MgB2 결정립 나노브릿지 특성에 관한 연구

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dc.contributor.author홍성학-
dc.contributor.author성원경-
dc.contributor.author강원남-
dc.contributor.author김동호-
dc.contributor.author김영국-
dc.contributor.author이순걸-
dc.contributor.author정국채-
dc.date.accessioned2021-09-08T22:23:36Z-
dc.date.available2021-09-08T22:23:36Z-
dc.date.created2021-06-17-
dc.date.issued2009-
dc.identifier.issn1229-4764-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/121230-
dc.description.abstractInter-grain nanobridges of the MgB2 superconductor have been fabricated by focused-ion-beam (FIB) and their electrical transport properties were studied. The MgB2 film was prepatterned into microbridges by a standard argon ion milling technique and then FIB-patterned into 100 nm x 100 nm bridges. Current-voltage characteristics showed a strong flux-flow type behavior at all temperatures with a trait of Josephson coupling near Tc. At low temperatures, the curves showed a two-step resistance-doubled transition with occasional hysteresis. The resistance-doubling transition is believed to be due to a two-channel flux-flow effect. The temperature-dependent critical current data showed Ic(T) ∝ (1-T/Tc)2 near Tc, same as a normal barrier junction, and Ic(T) ∝ (1-T/Tc)1.2 at low temperatures, similar to that of a film.-
dc.languageEnglish-
dc.language.isoen-
dc.publisher한국초전도학회-
dc.titleMgB2 결정립 나노브릿지 특성에 관한 연구-
dc.title.alternativeProperties of MgB2 Intragrain Nanobridges-
dc.typeArticle-
dc.contributor.affiliatedAuthor이순걸-
dc.identifier.bibliographicCitationProgress in Superconductivity, v.10, no.2, pp.74 - 78-
dc.relation.isPartOfProgress in Superconductivity-
dc.citation.titleProgress in Superconductivity-
dc.citation.volume10-
dc.citation.number2-
dc.citation.startPage74-
dc.citation.endPage78-
dc.type.rimsART-
dc.identifier.kciidART001336370-
dc.description.journalClass2-
dc.description.journalRegisteredClasskci-
dc.description.journalRegisteredClassother-
dc.subject.keywordAuthorMgB2-
dc.subject.keywordAuthorsuperconducting nanobridge-
dc.subject.keywordAuthorfocused-ion-beam-
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College of Science and Technology > Semiconductor Physics in Division of Display and Semiconductor Physics > 1. Journal Articles

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