Low-resistance and transparent Ni-Co solid solution/Au ohmic contacts to p-type GaN for green GaN-based light-emitting diodes
- Authors
- Kim, Kang-Won; Hong, Hyun-Gi; Song, June-O; Oh, Joon-Ho; Seong, Tae-Yeon
- Issue Date
- 12월-2008
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- Green LED; Ohmic contact; Ni-Co solid solution/Au; Contact resistivity; Light transmittance
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.44, no.6, pp.735 - 741
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 44
- Number
- 6
- Start Page
- 735
- End Page
- 741
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122296
- DOI
- 10.1016/j.spmi.2008.09.007
- ISSN
- 0749-6036
- Abstract
- We report on the formation of low-resistance and transparent p-type ohmic contact for green GaN-based light-emitting diodes (LEDs) using Ni-Co solid solution(5 nm)/Au(5 nm) scheme. The asdeposited Ni-Co solid solution(5 nm)/Au(5 nm) contact shows nonlinear current-voltage (I-V) characteristics. However, annealing the sample at 550 degrees C in air results in the formation of ohmic contacts with specific contact resistance of 6.5 x 10(-4) Omega cm(2). The annealed sample shows light transmittance of 71.7% at a wavelength of 530 nm, which is better than that (64.9%) of oxidized Ni/Au contacts. Based on Auger electron spectroscopy and x-ray photoemission spectroscopy results, the annealing-induced improvement of the contacts is described and discussed. (C) 2008 Elsevier Ltd. All rights reserved.
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