High Security FeRAM-Based EPC C1G2 UHF(860 MHz-960 MHz) Passive RFID Tag Chip
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Hee-Bok | - |
dc.contributor.author | Hong, Suk-Kyoung | - |
dc.contributor.author | Song, Yong-Wook | - |
dc.contributor.author | Sung, Man Young | - |
dc.contributor.author | Choi, Bokgil | - |
dc.contributor.author | Chung, Jinyong | - |
dc.contributor.author | Lee, Jong-Wook | - |
dc.date.accessioned | 2021-09-09T02:03:50Z | - |
dc.date.available | 2021-09-09T02:03:50Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-12 | - |
dc.identifier.issn | 1225-6463 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122302 | - |
dc.description.abstract | The metal-ferroelectric-metal (MFM) capacitor in the ferroelectric random access memory (FeRAM) embedded RFID chip is used in both the memory cell region and the peripheral analog and digital circuit area for capacitance parameter control. The capacitance value of the MFM capacitor is about 30 times larger than that of conventional capacitors, such as the poly-insulator-poly (PIP) capacitor and the metal-insulator-metal (MIM) capacitor. An MFM capacitor directly stacked over the analog and memory circuit region can share the layout area with the circuit region; thus, the chip size can be reduced by about 60%. The energy transformation efficiency using the MFM scheme is higher than that of the PIP scheme in RFID chips. The radio frequency operational signal properties using circuits with MFM capacitors are almost the same as or better than with PIP, MIM, and MOS capacitors. For the default value specification requirement, the default set cell is designed with an additional dummy cell. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.title | High Security FeRAM-Based EPC C1G2 UHF(860 MHz-960 MHz) Passive RFID Tag Chip | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Man Young | - |
dc.identifier.doi | 10.4218/etrij.08.0108.0338 | - |
dc.identifier.scopusid | 2-s2.0-57349172983 | - |
dc.identifier.wosid | 000261678000009 | - |
dc.identifier.bibliographicCitation | ETRI JOURNAL, v.30, no.6, pp.826 - 832 | - |
dc.relation.isPartOf | ETRI JOURNAL | - |
dc.citation.title | ETRI JOURNAL | - |
dc.citation.volume | 30 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 826 | - |
dc.citation.endPage | 832 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001296399 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Telecommunications | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Telecommunications | - |
dc.subject.keywordAuthor | Passive RFID tag | - |
dc.subject.keywordAuthor | FeRAM | - |
dc.subject.keywordAuthor | EEPROM | - |
dc.subject.keywordAuthor | MRAM | - |
dc.subject.keywordAuthor | PRAM | - |
dc.subject.keywordAuthor | MFM | - |
dc.subject.keywordAuthor | PIP | - |
dc.subject.keywordAuthor | MIM | - |
dc.subject.keywordAuthor | CLK | - |
dc.subject.keywordAuthor | demodulator | - |
dc.subject.keywordAuthor | modulator | - |
dc.subject.keywordAuthor | POR | - |
dc.subject.keywordAuthor | voltage multiplier | - |
dc.subject.keywordAuthor | Schottky diode | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.