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Electrical characteristics of nano-crystal Si particles for nano-floating gate memory

Authors
Yang, Jin SeokKim, Seong-IlKim, Yong TaeCho, Woon JoPark, Jung Ho
Issue Date
12월-2008
Publisher
ELSEVIER SCI LTD
Keywords
Nano-crystal(NC)-Si particles; Non-volatile memory device; NFGM; C-V characteristics; I-V characteristics
Citation
MICROELECTRONICS JOURNAL, v.39, no.12, pp.1553 - 1555
Indexed
SCIE
SCOPUS
Journal Title
MICROELECTRONICS JOURNAL
Volume
39
Number
12
Start Page
1553
End Page
1555
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/122312
DOI
10.1016/j.mejo.2008.03.016
ISSN
0026-2692
Abstract
In these days, the researches of non-volatile memory device using nano-crystal(NC)-Si are actively progressing to replace flash memory devices. Many kinds of non-volatile memory devices such as phase-change(P)-RAM, resistance(Re)-RAM, polymer(Po)-RAM, and nano-floating gate memory(NFGM) are being studied. In this work, we study NFGM device in which information is memorized by storing electrons in silicon nanocrystal. The NFGM device has shown great promise for ultra-dense high-endurance memory device for low-power applications IS. Tiwari, et al., Appl. Phys. Lett. 68 (1996) 1377]. and it is able to fabricate IT-type device. Thus, the NFGM is considered to replace existing flash memory device. Non-volatile memory device has been fabricated by using NC-Si particles. The NC-Si particles have broad size range of 1-5 nm and an average size of 2.7 nm, which are sufficiently small to indicate the quantum effect for silicon. The memory window has been analyzed by C-V characteristic of NC-Si particles. V-d-I-d and V-g-I-d characteristics of the fabricated device have also been measured. (c) 2008 Published by Elsevier Ltd.
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