Low-Temperature Sintering and Microwave Dielectric Properties of V2O5-Added Zn2SiO4 Ceramics

Abstract

V2O5 was added to ceramics of nominal composition Zn1.8SiO3.8 (ZS) in order to decrease their sintering temperature for application to low-temperature cofired ceramic devices. For the specimens sintered at 875 degrees C, a dense microstructure was developed when the V2O5 content exceeded 9.0 mol% due to the presence of the liquid phase containing SiO2 and V2O5. The microwave dielectric properties of the ZS ceramics were influenced by the V2O5 content. Good microwave dielectric properties of Qxf=17 500 GHz, epsilon(r)=7.3, and tau(f)=-28 ppm/degrees C were obtained from the specimen containing 12.0 mol% V2O5 sintered at 875 degrees C for 2 h.