Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Group III-nitride radial heterojunction nanowire light emitters
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Mastro, Michael A. | - |
| dc.contributor.author | Caldwell, Josh | - |
| dc.contributor.author | Twigg, Mark | - |
| dc.contributor.author | Simpkins, Blake | - |
| dc.contributor.author | Glembocki, Orest | - |
| dc.contributor.author | Holm, Ron T. | - |
| dc.contributor.author | Eddy, Charles R., Jr. | - |
| dc.contributor.author | Kub, Fritz | - |
| dc.contributor.author | Kim, Hong-Yeol | - |
| dc.contributor.author | Alin, Jaehui | - |
| dc.contributor.author | Kim, Jihyun | - |
| dc.date.accessioned | 2021-09-09T02:17:46Z | - |
| dc.date.available | 2021-09-09T02:17:46Z | - |
| dc.date.created | 2021-06-10 | - |
| dc.date.issued | 2008-12 | - |
| dc.identifier.issn | 1229-9162 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122369 | - |
| dc.description.abstract | Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | KOREAN ASSOC CRYSTAL GROWTH, INC | - |
| dc.subject | BAND-GAP | - |
| dc.subject | GROWTH | - |
| dc.subject | EDGE | - |
| dc.title | Group III-nitride radial heterojunction nanowire light emitters | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Jihyun | - |
| dc.identifier.scopusid | 2-s2.0-59549099609 | - |
| dc.identifier.wosid | 000262916100008 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF CERAMIC PROCESSING RESEARCH, v.9, no.6, pp.584 - 587 | - |
| dc.relation.isPartOf | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
| dc.citation.title | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
| dc.citation.volume | 9 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 584 | - |
| dc.citation.endPage | 587 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART001468093 | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
| dc.subject.keywordPlus | BAND-GAP | - |
| dc.subject.keywordPlus | GROWTH | - |
| dc.subject.keywordPlus | EDGE | - |
| dc.subject.keywordAuthor | III-nitride | - |
| dc.subject.keywordAuthor | Nanowire | - |
| dc.subject.keywordAuthor | Defect | - |
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.