Electrical characteristics of contacts to thin film N-polar n-type GaN
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Hyunsoo | - |
dc.contributor.author | Ryou, Jae-Hyun | - |
dc.contributor.author | Dupuis, Russell D. | - |
dc.contributor.author | Lee, Sung-Nam | - |
dc.contributor.author | Park, Yongjo | - |
dc.contributor.author | Jeon, Joon-Woo | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-09T02:43:16Z | - |
dc.date.available | 2021-09-09T02:43:16Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-11-10 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122410 | - |
dc.description.abstract | The electrical characteristics of metallization contacts to a thin film N-polar n-type GaN layer fabricated by a laser lift-off process combined with a dry etching are investigated. It is shown that for Pt Schottky contacts, the Schottky barrier height of the N-polar GaN is 1.27 eV, which is larger than that (1.23 eV) of reference Ga-polar GaN. Ti/Al Ohmic contacts to the N-polar GaN experience thermal degradation even at 400 degrees C. Such annealing-induced degradation is explained in terms of the presence of the complex surface states of the N-polar GaN, which consists of impurities and process-induced donorlike and acceptorlike defects. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | PT/GAN SCHOTTKY DIODES | - |
dc.subject | CRYSTAL-POLARITY | - |
dc.subject | OHMIC CONTACTS | - |
dc.subject | DEPENDENCE | - |
dc.subject | TI/AL | - |
dc.title | Electrical characteristics of contacts to thin film N-polar n-type GaN | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1063/1.3013838 | - |
dc.identifier.scopusid | 2-s2.0-56249102431 | - |
dc.identifier.wosid | 000260944100048 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.93, no.19 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 93 | - |
dc.citation.number | 19 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PT/GAN SCHOTTKY DIODES | - |
dc.subject.keywordPlus | CRYSTAL-POLARITY | - |
dc.subject.keywordPlus | OHMIC CONTACTS | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | TI/AL | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | etching | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | impurities | - |
dc.subject.keywordAuthor | platinum | - |
dc.subject.keywordAuthor | Schottky barriers | - |
dc.subject.keywordAuthor | semiconductor thin films | - |
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