Mapping subsurface structure through atomically thin bismuth films on Si(111)-(7 x 7) with scanning tunneling microscope
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Oh, Youngtek | - |
dc.contributor.author | Seo, Jungpil | - |
dc.contributor.author | Suh, Hwansoo | - |
dc.contributor.author | Seo, Jung Seok | - |
dc.contributor.author | Kahng, Se-Jong | - |
dc.contributor.author | Kuk, Young | - |
dc.date.accessioned | 2021-09-09T02:49:47Z | - |
dc.date.available | 2021-09-09T02:49:47Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-11-01 | - |
dc.identifier.issn | 0039-6028 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122422 | - |
dc.description.abstract | We performed scanning tunneling microscopy/spectroscopy measurements and spatial mapping of dI/dV on a few atomic layers of bismuth (Bi) film on a Si(111)-(7 x 7) substrate. At a Bi coverage of four monolayers (ML), local thickness variation could be measured due to thickness dependence of the surface states. At the nominal coverage of 6.5 ML, the dI/dV map reveals the subsurface structures, such as substrate step edges and buried Bi islands. The subsurface structures could be observed at specific biases, by both the electronic interference in a Bi film and the variation of the Bi surface states as a function of the film thickness. (c) 2008 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | EPITAXIAL-GROWTH | - |
dc.subject | ULTRATHIN FILMS | - |
dc.subject | SURFACES | - |
dc.subject | GRAPHENE | - |
dc.title | Mapping subsurface structure through atomically thin bismuth films on Si(111)-(7 x 7) with scanning tunneling microscope | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kahng, Se-Jong | - |
dc.identifier.doi | 10.1016/j.susc.2008.09.004 | - |
dc.identifier.scopusid | 2-s2.0-54249118103 | - |
dc.identifier.wosid | 000261246800020 | - |
dc.identifier.bibliographicCitation | SURFACE SCIENCE, v.602, no.21, pp.3352 - 3357 | - |
dc.relation.isPartOf | SURFACE SCIENCE | - |
dc.citation.title | SURFACE SCIENCE | - |
dc.citation.volume | 602 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 3352 | - |
dc.citation.endPage | 3357 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
dc.subject.keywordPlus | ULTRATHIN FILMS | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordAuthor | Subsurface structure | - |
dc.subject.keywordAuthor | Scanning tunneling microscopy and spectroscopy | - |
dc.subject.keywordAuthor | Bismuth film | - |
dc.subject.keywordAuthor | Surface states | - |
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