Magneto-Transport Characteristics of Magnetic Tunnel Junction With a Synthetic Antiferromagnetic Amorphous CoFeSiB Free Layer
DC Field | Value | Language |
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dc.contributor.author | Chun, Byong S. | - |
dc.contributor.author | Lee, S. Y. | - |
dc.contributor.author | Rhee, J. R. | - |
dc.contributor.author | Yim, H. I. | - |
dc.contributor.author | Hwang, J. Y. | - |
dc.contributor.author | Kim, T. W. | - |
dc.contributor.author | Kim, Young Keun | - |
dc.date.accessioned | 2021-09-09T02:55:18Z | - |
dc.date.available | 2021-09-09T02:55:18Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-11 | - |
dc.identifier.issn | 0018-9464 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122452 | - |
dc.description.abstract | A synthetic antiferromagnet (SAF) structure comprising two ferromagnetic amorphous CoFeSiB layers was employed as a free layer in magnetic tunnel junctions (MTJs) to enhance magnetotransport and magnetization switching performance. In Si-SiO2/Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx 1.5/CoFeSiB t(t= 3.5, 4.0,4.5, 5.0)/Ru 1.0/CoFeSiB 7-t/Ru 60 (nm) MTJ structures, the tunneling magnetoresistance (TMR) ratio, interlayer coupling field, and switching field all showed layer thickness dependence for 3.5 mn <= t <= 5 nm. When the CoFeSiB t layer (a lower ferromagnetic layer in the SAF structure) became thinner, a lower TMR ratio with a lower switching field was observed. Whereas, when the CoFeSiB t layer became thicker, a higher junction resistance with a lower interlayer coupling field was observed. This was resulted from the decrement of saturation magnetization and the smooth tunnel barrier/free-layer interface formation, respectively. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | MAGNETORESISTANCE | - |
dc.title | Magneto-Transport Characteristics of Magnetic Tunnel Junction With a Synthetic Antiferromagnetic Amorphous CoFeSiB Free Layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Young Keun | - |
dc.identifier.doi | 10.1109/TMAG.2008.2002383 | - |
dc.identifier.wosid | 000262221200037 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MAGNETICS, v.44, no.11, pp.2598 - 2600 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.citation.title | IEEE TRANSACTIONS ON MAGNETICS | - |
dc.citation.volume | 44 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 2598 | - |
dc.citation.endPage | 2600 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordAuthor | Amorphous ferromagnetic | - |
dc.subject.keywordAuthor | CoFeSiB | - |
dc.subject.keywordAuthor | magnetic tunnel junction | - |
dc.subject.keywordAuthor | synthetic antiferromagnet | - |
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