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Zinc Sulphide Overlayer Two-Dimensional Photonic Crystal for Enhanced Extraction of Light from a Micro Cavity Light-Emitting Diode

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dc.contributor.authorMastro, Michael A.-
dc.contributor.authorKim, Chul Soo-
dc.contributor.authorKim, Mijin-
dc.contributor.authorCaldwell, Josh-
dc.contributor.authorHolm, Ron T.-
dc.contributor.authorVurgaftman, Igor-
dc.contributor.authorKim, Jihyun-
dc.contributor.authorEddy, Charles R., Jr.-
dc.contributor.authorMeyer, Jerry R.-
dc.date.accessioned2021-09-09T04:07:43Z-
dc.date.available2021-09-09T04:07:43Z-
dc.date.created2021-06-10-
dc.date.issued2008-10-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/122676-
dc.description.abstractA two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1 D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (ID+2D). The deposition of an ideal micro-cavity optical thickness of approximate to lambda/2 is impractical for Ill-nitride LEDs, and in realistic multi-mode devices a large fraction of the light is lost to internal refraction as guided light. Therefore, a 2D photonic crystal on the surface of the LED was used to diffract and thus redirect this guided light out of the semiconductor over several hundred microns. Additionally, the employment of a post-epitaxy ZnS 2D photonic crystal avoided the typical etching into the GaN:Mg contact layer, a procedure which can cause damage to the near surface. [DOI: 10.1143/JJAP.47.7827]-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIOP PUBLISHING LTD-
dc.subjectDISTRIBUTED BRAGG REFLECTORS-
dc.subjectMICROCAVITIES-
dc.subjectEMISSION-
dc.subjectIMPACT-
dc.subjectPOWER-
dc.titleZinc Sulphide Overlayer Two-Dimensional Photonic Crystal for Enhanced Extraction of Light from a Micro Cavity Light-Emitting Diode-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Jihyun-
dc.identifier.doi10.1143/JJAP.47.7827-
dc.identifier.scopusid2-s2.0-59149099290-
dc.identifier.wosid000260443900014-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.10, pp.7827 - 7830-
dc.relation.isPartOfJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.citation.volume47-
dc.citation.number10-
dc.citation.startPage7827-
dc.citation.endPage7830-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusDISTRIBUTED BRAGG REFLECTORS-
dc.subject.keywordPlusMICROCAVITIES-
dc.subject.keywordPlusEMISSION-
dc.subject.keywordPlusIMPACT-
dc.subject.keywordPlusPOWER-
dc.subject.keywordAuthorphotonic crystal-
dc.subject.keywordAuthorGaN-
dc.subject.keywordAuthormicro cavity light-emitting diode-
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