In situ EC-STM studies of n-Si(111): H in 40% NH4F solution at pH 10
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Sang-Eun | - |
dc.contributor.author | Yoon, Jung-Hyun | - |
dc.contributor.author | Lee, Chi-Woo J. | - |
dc.contributor.author | Jeon, Il Cheol | - |
dc.date.accessioned | 2021-09-09T04:29:29Z | - |
dc.date.available | 2021-09-09T04:29:29Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-09-01 | - |
dc.identifier.issn | 0013-4686 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122726 | - |
dc.description.abstract | In situ electrochemical-scanning tunneling microcopy (EC-STM) was employed to investigate the etching dynamics of the moderately doped n-Si(111) electrode during cyclic voltammetric perturbation and at the seven different potentials including the open circuit potential (OCP) in 40% NH4F solution at pH 10, which was prepared from 40% NH4F and concentrated NH4OH solution. The etching rate was significant at OCP and showed an exponential dependence on the potential applied to the silicon substrate electrode. Although some triangular pits were generated at the Si(111) surface, at the potentials more negative than OCP the site dependence in the removal of surface silicon atoms prevailed and led to the atomically flat Si(111):H surfaces with sharply defined steps of the step height 3.1 angstrom, where the interatomic distance of 3.8 angstrom was observed with a three-fold symmetry. At the potentials sufficiently more positive than OCP, macroporous hole was formed to limit further in situ EC-STM study. The results were compared with in situ EC-STM studies of the etching reaction of n-Si(111):H in the aqueous solution of dilute ammonium fluoride at pH 5 40% NH4F at pH 8, and 1 M NaOH reported in the literature. (C) 2008 Elsevier Ltd. All fights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject | FLAT H-SI(111) SURFACES | - |
dc.subject | N-TYPE SILICON | - |
dc.subject | HYDROGEN TERMINATION | - |
dc.subject | SI(111) SURFACES | - |
dc.subject | AQUEOUS NH4F | - |
dc.subject | HF SOLUTIONS | - |
dc.subject | WATER | - |
dc.subject | DEPENDENCE | - |
dc.subject | MECHANISM | - |
dc.title | In situ EC-STM studies of n-Si(111): H in 40% NH4F solution at pH 10 | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Chi-Woo J. | - |
dc.identifier.doi | 10.1016/j.electacta.2008.01.043 | - |
dc.identifier.scopusid | 2-s2.0-44949129149 | - |
dc.identifier.wosid | 000257811300019 | - |
dc.identifier.bibliographicCitation | ELECTROCHIMICA ACTA, v.53, no.21, pp.6178 - 6183 | - |
dc.relation.isPartOf | ELECTROCHIMICA ACTA | - |
dc.citation.title | ELECTROCHIMICA ACTA | - |
dc.citation.volume | 53 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 6178 | - |
dc.citation.endPage | 6183 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.subject.keywordPlus | SCANNING-TUNNELING-MICROSCOPY | - |
dc.subject.keywordPlus | FLAT H-SI(111) SURFACES | - |
dc.subject.keywordPlus | N-TYPE SILICON | - |
dc.subject.keywordPlus | HYDROGEN TERMINATION | - |
dc.subject.keywordPlus | SI(111) SURFACES | - |
dc.subject.keywordPlus | AQUEOUS NH4F | - |
dc.subject.keywordPlus | HF SOLUTIONS | - |
dc.subject.keywordPlus | WATER | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordAuthor | EC-STM | - |
dc.subject.keywordAuthor | n-Si(111) | - |
dc.subject.keywordAuthor | etching | - |
dc.subject.keywordAuthor | NH4F | - |
dc.subject.keywordAuthor | hydrogen-terminated Si(111) | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.