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Light extraction enhancement of GaN-based light emitting diodes using MgF2/Al omnidirectional reflectors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Hyunsoo | - |
| dc.contributor.author | Lee, Sung-Nam | - |
| dc.contributor.author | Park, Youngjo | - |
| dc.contributor.author | Kim, Kyoung-Kook | - |
| dc.contributor.author | Kwak, Joon Seop | - |
| dc.contributor.author | Seong, Tae-Yeon | - |
| dc.date.accessioned | 2021-09-09T04:29:40Z | - |
| dc.date.available | 2021-09-09T04:29:40Z | - |
| dc.date.created | 2021-06-10 | - |
| dc.date.issued | 2008-09-01 | - |
| dc.identifier.issn | 0021-8979 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122727 | - |
| dc.description.abstract | We report on the enhancement of the light extraction of GaN-based light emitting diodes (LEDs) by using MgF2/Al omnidirectional reflectors (ODRs). The ODRs consisting of a quarter-wavelength-thick MgF2 having a refractive index of 1.39 and Al metal produce a high-angle-integrated reflectivity of 96.6%. To optimize the electrical injection and light reflection, the MgF2/Al ODRs are combined with Pd/Ag metallic reflectors using mesh configuration. Compared to reference LEDs, LEDs fabricated with the MgF2/Al ODRs show an enhanced output power by 23% and a slight increase in the forward voltage by 0.18 V, leading to the improvement in power efficiency by 17%. (c) 2008 American Institute of Physics. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.subject | CONTACTS | - |
| dc.title | Light extraction enhancement of GaN-based light emitting diodes using MgF2/Al omnidirectional reflectors | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
| dc.identifier.doi | 10.1063/1.2973685 | - |
| dc.identifier.scopusid | 2-s2.0-51849147468 | - |
| dc.identifier.wosid | 000259853600011 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.104, no.5 | - |
| dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
| dc.citation.volume | 104 | - |
| dc.citation.number | 5 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | CONTACTS | - |
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Related Researcher
- SEONG, TAE YEON
- College of Engineering (Department of Materials Science and Engineering)