Fabrication and Characterization of Sidewall Defined Silicon-on-Insulator Single-Electron Transistor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Young Chai | - |
dc.contributor.author | Cho, Keun Hwi | - |
dc.contributor.author | Hong, Byoung Hak | - |
dc.contributor.author | Son, Seung Hun | - |
dc.contributor.author | Kim, Duk Soo | - |
dc.contributor.author | Whang, Dongmok | - |
dc.contributor.author | Hwang, Sung Woo | - |
dc.contributor.author | Yu, Yuri Seop | - |
dc.contributor.author | Ahn, David | - |
dc.date.accessioned | 2021-09-09T04:53:32Z | - |
dc.date.available | 2021-09-09T04:53:32Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-09 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122819 | - |
dc.description.abstract | We reported the fabrication and characterization of a new type of silicon-on-insulator (SOI) single-electron transistor utilizing usual CMOS sidewall gate structures. We used oxide sidewall spacer layers as well as two poly-Si finger gates on an SOI wire mesa as implantation masks, to form tunnel barriers and thus a quantum dot (QD) that is smaller than the spacing between polygates. Characterization results exhibited clear Coulomb oscillations persisting up to 30 K. The Coulomb energy and the size of the QD extracted from three devices were consistent with the spacing between two poly-Si gates of each device. Furthermore, the junction capacitance of each device was almost constant and only the gate capacitance varied. These analyses suggested that the size of the QD was fully controlled by the process. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | QUANTUM-DOT | - |
dc.subject | SPECTROSCOPY | - |
dc.title | Fabrication and Characterization of Sidewall Defined Silicon-on-Insulator Single-Electron Transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hwang, Sung Woo | - |
dc.identifier.doi | 10.1109/TNANO.2008.927042 | - |
dc.identifier.scopusid | 2-s2.0-53349173803 | - |
dc.identifier.wosid | 000260463300004 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.7, no.5, pp.544 - 550 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.title | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.volume | 7 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 544 | - |
dc.citation.endPage | 550 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | QUANTUM-DOT | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordAuthor | Coulomb oscillation | - |
dc.subject.keywordAuthor | silicon-on-insulator (SOI) | - |
dc.subject.keywordAuthor | single-electron transistor (SET) | - |
dc.subject.keywordAuthor | oxide sidewall spacer | - |
dc.subject.keywordAuthor | poly silicon gate | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.