Effect of oxygen pressure on the electrical properties of Bi5Nb3O15 films grown by RF magnetron sputtering
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Kyung-Hoon | - |
dc.contributor.author | Choi, Chang-Hak | - |
dc.contributor.author | Choi, Joo-Young | - |
dc.contributor.author | Seong, Tae-Geun | - |
dc.contributor.author | Nahm, Sahn | - |
dc.contributor.author | Kang, Chong-Yun | - |
dc.contributor.author | Yoon, Seok-Jin | - |
dc.contributor.author | Kim, Jong-Hee | - |
dc.date.accessioned | 2021-09-09T04:54:32Z | - |
dc.date.available | 2021-09-09T04:54:32Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-09 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122824 | - |
dc.description.abstract | Bi5Nb3O15 (B5N3) films grown under a low oxygen partial pressure (OP) of 1.7 mtorr showed a high leakage current density of 0.1 A/cm(2) at 1.0 MV/cm. However, the leakage current density decreased with increasing OP to a minimum of 5.8 x 10(-9) A/cm(2) for the film grown under 5.1 mtorr due to the decreased number of oxygen vacancies. This film also showed an improved breakdown field of 2.2 MV/cm and a large capacitance density of 24.9 fF/mu m(2). The electrical properties of the film, however, deteriorated with a further increase in OP, which is probably due to the formation of oxygen interstitial ions. Therefore, superior electrical properties for the B5N3 film can be obtained by careful control of OP. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | MIM CAPACITORS | - |
dc.subject | HFO2 | - |
dc.title | Effect of oxygen pressure on the electrical properties of Bi5Nb3O15 films grown by RF magnetron sputtering | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Nahm, Sahn | - |
dc.identifier.doi | 10.1109/LED.2008.2001476 | - |
dc.identifier.scopusid | 2-s2.0-50649102398 | - |
dc.identifier.wosid | 000259573400005 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.984 - 987 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 29 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 984 | - |
dc.citation.endPage | 987 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | MIM CAPACITORS | - |
dc.subject.keywordPlus | HFO2 | - |
dc.subject.keywordAuthor | Bi5Nb3O15 (B5N3) | - |
dc.subject.keywordAuthor | high dielectric constant | - |
dc.subject.keywordAuthor | leakage current density | - |
dc.subject.keywordAuthor | metal-insulator-metal (MIM) capacitor | - |
dc.subject.keywordAuthor | temperature coefficient of capacitance (TCC) | - |
dc.subject.keywordAuthor | voltage coefficient of capacitance (VCC) | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.