Effect of modifying a methyl siloxane-based dielectric by a polymer thin film for pentacene thin-film transistors
- Authors
- Shin, Sang-Il; Kwon, Jae-Hong; Seo, Jung-Hoon; Ju, Byeong-Kwon
- Issue Date
- 30-8월-2008
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- organic thin film transistor; pentacene; polymer film; solution processed
- Citation
- APPLIED SURFACE SCIENCE, v.254, no.21, pp.6987 - 6990
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 254
- Number
- 21
- Start Page
- 6987
- End Page
- 6990
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122842
- DOI
- 10.1016/j.apsusc.2008.05.092
- ISSN
- 0169-4332
- Abstract
- We report on the fabrication of pentacene thin-film transistors (TFTs) utilizing a spun methyl siloxane-based spin-on-glass (SOG) dielectric and show that these devices can give a similar electrical performance as achieved by using pentacene TFTs with a silicon dioxide (SiO2) dielectric. To improve the electrical performance of pentacene TFTs with the SOG dielectric, we employed a hybrid dielectric of an SOG/cross-linked poly-4-vinylphenol (PVP) polymer. The PVP film was deposited onto the spun SOG dielectric prior to pentacene evaporation, resulting in an improvement of the saturation field effect mobility (mu(sat)) from 0.01 cm(2)/(V s) to 0.76 cm(2)/(V s). The good surface morphology and the matching surface energy of the SOG dielectric that was modified with the polymer thin film allow the optimized growth of crystalline pentacene domains whose nuclei are embedded in an amorphous phase. (C) 2008 Elsevier B. V. All rights reserved.
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