Etching Characteristics and Mechanism of InP in Inductively Coupled HBr/Ar Plasma
- Authors
- Lee, Hyun Woo; Kim, Mansu; Min, Nam-Ki; Efremov, Alexander; Lee, Chi-Woo; Kwon, Kwang-Ho
- Issue Date
- Aug-2008
- Publisher
- JAPAN SOCIETY APPLIED PHYSICS
- Keywords
- InP; HBr/Ar plasma; etch rate; etch mechanism
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.8, pp 6917 - 6922
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 47
- Number
- 8
- Start Page
- 6917
- End Page
- 6922
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122890
- DOI
- 10.1143/JJAP.47.6917
- ISSN
- 0021-4922
1347-4065
- Abstract
- Investigations of InP etch characteristics and mechanisms in HBr/Ar inductively coupled plasma were carried out. The etch rates of InP and the photoresist were measured as functions of HBr/Ar mixing ratio at fixed gas pressure (5 mTorr), input power (800 W). and bias power (200 W). Langmuir probe diagnostics and zero-dimensional (global) plasma modeling provided the information on plasma parameters, plasma composition, and fluxes of active species. It was found that, with variations in gas mixing ratio. the InP etch rate follows the changes in Br atom density and flux, but shows opposite behavior of the changes in H atoms and positive ions. These findings allow one to conclude that, under a given set of input process parameters. the InP etch process is not limited by the ion-surface interaction kinetics and that Br atoms are the main chemically active species.
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- Appears in
Collections - College of Science and Technology > Department of Electro-Mechanical Systems Engineering > 1. Journal Articles
- College of Science and Technology > Department of Advanced Materials Chemistry > 1. Journal Articles

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