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Synthesis of novel platinum precursor and its application to metal organic chemical vapor deposition of platinum thin films

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dc.contributor.authorLee, Sun Sook-
dc.contributor.authorLee, Ho-Min-
dc.contributor.authorPark, Min-Jung-
dc.contributor.authorAn, Ki-Seok-
dc.contributor.authorKim, Jinkwon-
dc.contributor.authorLee, Jong-Heun-
dc.contributor.authorChung, Taek-Mo-
dc.contributor.authorKim, Chang Gyoun-
dc.date.accessioned2021-09-09T05:35:29Z-
dc.date.available2021-09-09T05:35:29Z-
dc.date.created2021-06-10-
dc.date.issued2008-08-
dc.identifier.issn0253-2964-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/122924-
dc.description.abstractA novel platinum aminoalkoxide complex, Pt(dmamp)(2) has been prepared by the reaction of cis-(py)(2)PtI2 with two equivalents of Na(dmamp) (dmamp = 1-dimethylamino-2-methyl-2-propanolate). Single-crystal X-ray crystallographic analysis shows that the Pt(dmamp)(2) complex keeps a square planar geometry with each two nitrogen atoms and two oxygen atoms having trans configuration. Platinum films have been deposited on TaN/Ta/Si substrates by metal organic chemical vapor deposition (MOCVD) using Pt(dmamp)(2). As-deposited platinum thin films did not contain any appreciable amounts of impurities except a little carbon. As the deposition temperature was increased, the films resistivity and deposition rate increased. The electrical resistivity (13.6 mu Omega cm) of Pt film deposited at 400 degrees C is a little higher than the bulk value (10.5 mu Omega cm) at 293 K. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectMOCVD-
dc.subjectLAYER-
dc.subjectTEMPERATURE-
dc.subjectMECHANISMS-
dc.subjectCVD-
dc.subjectSI-
dc.titleSynthesis of novel platinum precursor and its application to metal organic chemical vapor deposition of platinum thin films-
dc.typeArticle-
dc.contributor.affiliatedAuthorLee, Jong-Heun-
dc.identifier.scopusid2-s2.0-50449096247-
dc.identifier.wosid000259292000013-
dc.identifier.bibliographicCitationBULLETIN OF THE KOREAN CHEMICAL SOCIETY, v.29, no.8, pp.1491 - 1494-
dc.relation.isPartOfBULLETIN OF THE KOREAN CHEMICAL SOCIETY-
dc.citation.titleBULLETIN OF THE KOREAN CHEMICAL SOCIETY-
dc.citation.volume29-
dc.citation.number8-
dc.citation.startPage1491-
dc.citation.endPage1494-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.identifier.kciidART001524983-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClasskci-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.subject.keywordPlusMOCVD-
dc.subject.keywordPlusLAYER-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusMECHANISMS-
dc.subject.keywordPlusCVD-
dc.subject.keywordPlusSI-
dc.subject.keywordAuthorplatinum-
dc.subject.keywordAuthorprecursor-
dc.subject.keywordAuthorMOCVD-
dc.subject.keywordAuthoraminoalkoxide-
dc.subject.keywordAuthorthin films-
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