Fabrication and characterization of pentacene-based transistors with a room-temperature mobility of 1.25 cm(2)/Vs
DC Field | Value | Language |
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dc.contributor.author | Seo, Hoon-Seok | - |
dc.contributor.author | Jang, Young-Se | - |
dc.contributor.author | Zhang, Ying | - |
dc.contributor.author | Abthagir, P. Syed | - |
dc.contributor.author | Choi, Jong-Ho | - |
dc.date.accessioned | 2021-09-09T05:49:38Z | - |
dc.date.available | 2021-09-09T05:49:38Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-08 | - |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122987 | - |
dc.description.abstract | Pentacene-based transistors produced by a novel neutral cluster beam deposition method were characterized, and the effects of the surface pretreatments were examined. Atomic force microscopy and X-ray diffraction showed that the cluster beams were quite efficient in growing high-quality, crystalline thin films on SiO2 substrates at room-temperature without any thermal post-treatment, and that an amphiphilic surfactant, octadecyltrichlorosilane (OTS), enhances the packing density and crystallinity significantly. The observed field-effect mobilities (mu(eff)) were among the best reported thus far: 0.47 and 1.25 cm(2)/Vs for the OTS-untreated and -pretreated devices, respectively. The device performance was found to be consistent with the estimated trap density and activation energy, which were derived from the transport characteristics for the temperature dependence of mu(eff) in the range of 10-300 K. (C) 2008 Published by Elsevier B.V. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | BEAM DEPOSITION METHODS | - |
dc.subject | PULSED-LASER DEPOSITION | - |
dc.subject | GATE DIELECTRICS | - |
dc.subject | DEVICES | - |
dc.subject | PERFORMANCE | - |
dc.subject | LAYER | - |
dc.title | Fabrication and characterization of pentacene-based transistors with a room-temperature mobility of 1.25 cm(2)/Vs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Jong-Ho | - |
dc.identifier.doi | 10.1016/j.orgel.2008.01.008 | - |
dc.identifier.scopusid | 2-s2.0-44149088078 | - |
dc.identifier.wosid | 000257211600003 | - |
dc.identifier.bibliographicCitation | ORGANIC ELECTRONICS, v.9, no.4, pp.432 - 438 | - |
dc.relation.isPartOf | ORGANIC ELECTRONICS | - |
dc.citation.title | ORGANIC ELECTRONICS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 432 | - |
dc.citation.endPage | 438 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | BEAM DEPOSITION METHODS | - |
dc.subject.keywordPlus | PULSED-LASER DEPOSITION | - |
dc.subject.keywordPlus | GATE DIELECTRICS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordAuthor | pentacene | - |
dc.subject.keywordAuthor | neutral cluster beam deposition (NCBD) | - |
dc.subject.keywordAuthor | organic thin-film transistor | - |
dc.subject.keywordAuthor | octadecyltrichlorosilane (OTS) | - |
dc.subject.keywordAuthor | temperature dependence of field-effect mobility (mu(eff)) | - |
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