Synthesis and microwave dielectric properties of MgSiO3 ceramics

Abstract

MgSiO3 ceramics were synthesized and their microwave dielectric properties were investigated. The Mg2SiO4 phase was formed at temperatures lower than 1200 degrees C, while the orthorhombic MgSiO3 phase started to form by the reaction of SiO2 and Mg2SiO4 in the specimen fired at 1200 degrees C. The structure of the MgSiO3 ceramics was transformed from orthorhombic to monoclinic when the sintering temperature exceeded 1400 degrees C. A dense microstructure was developed for the specimens sintered at above 1350 degrees C. The excellent microwave dielectric properties of epsilon(r)=6.7, Q x f=121 200 GHz, and tau(f)=-17 ppm/degrees C were obtained from the MgSiO3 ceramics sintered at 1380 degrees C for 13 h.