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Fabrication and characterisation of CMOS compatible silicon nanowire biosensor

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dc.contributor.authorKang, G. B.-
dc.contributor.authorPark, J. M.-
dc.contributor.authorKim, S. G.-
dc.contributor.authorKoo, J. G.-
dc.contributor.authorPark, J. H.-
dc.contributor.authorSohn, Y. -S.-
dc.contributor.authorKim, Y. T.-
dc.date.accessioned2021-09-09T05:52:52Z-
dc.date.available2021-09-09T05:52:52Z-
dc.date.created2021-06-10-
dc.date.issued2008-07-31-
dc.identifier.issn0013-5194-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/123003-
dc.description.abstractA silicon nanowire (SiNW) biosensor for label-free and real-time detection has been fabricated by complementary metal-oxide semiconductor (CMOS) technology. For the detection of prostate-specific antigen (PSA) used as a biomarker of prostate cancer the SiNW surface was modified to immobilise the antibody of PSA (anti-PSA). Real-time monitoring reveals the change in conductivity of the SiNW on specific binding of PSA to anti-PSA. For 355 nm SiNW, the response to 10 ng/ml of PSA was 7.3%.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.subjectDNA-
dc.titleFabrication and characterisation of CMOS compatible silicon nanowire biosensor-
dc.typeArticle-
dc.contributor.affiliatedAuthorPark, J. H.-
dc.identifier.doi10.1049/el:20081876-
dc.identifier.scopusid2-s2.0-49149097342-
dc.identifier.wosid000258593900007-
dc.identifier.bibliographicCitationELECTRONICS LETTERS, v.44, no.16, pp.953 - 955-
dc.relation.isPartOfELECTRONICS LETTERS-
dc.citation.titleELECTRONICS LETTERS-
dc.citation.volume44-
dc.citation.number16-
dc.citation.startPage953-
dc.citation.endPage955-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusDNA-
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