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A microelectromechanical systems-based vertical magnetometer-accelerometer with the modulated frequency difference in one microstructure

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dc.contributor.authorCho, Ji-Man-
dc.contributor.authorKim, Kyung Soo-
dc.contributor.authorAn, Sengd-
dc.contributor.authorYeo, Choel Ho-
dc.contributor.authorShin, Kyoung-
dc.contributor.authorJu, Byeong Kwon-
dc.contributor.authorLee, Sang-Yong-
dc.contributor.authorKim, Soo-Won-
dc.date.accessioned2021-09-09T06:21:38Z-
dc.date.available2021-09-09T06:21:38Z-
dc.date.created2021-06-10-
dc.date.issued2008-07-
dc.identifier.issn0021-4922-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/123076-
dc.description.abstractThis paper presents a vertical magnetometer-accelerometer capable of detecting Simultaneously both the acceleration and the geomagnetic field. The conceived sensor detects the magnetic field by the Lorentz force and differentiates the magnetic field and the acceleration by the modulated Frequency difference. The process Uses a silicon-on-glass (SOG) water and the gold-silicon eutectic bonding for the wafer-level hermetic packaging. When the 10 mA current flows through the conductor, the measured resistances are an average of 10 Omega. so in total, 1 mW is consumed in the current driving element. When 35 mu T and 1 g is applied to the sensor at the same time. the fusion sensor has a sensitivity of 73 mV/g in acceleration sensing mode. and a sensitivity of approximately 1.63 mV/mu T in magnetic field sensing mode. This newly developed sensor call be used in portable navigators that need a small size. low cost and low power electronic compass.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIOP PUBLISHING LTD-
dc.subjectMAGNETIC-FIELD SENSOR-
dc.subjectXYLOPHONE BAR MAGNETOMETER-
dc.subjectPLANAR FLUXGATE SENSOR-
dc.subjectCMOS-
dc.titleA microelectromechanical systems-based vertical magnetometer-accelerometer with the modulated frequency difference in one microstructure-
dc.typeArticle-
dc.contributor.affiliatedAuthorJu, Byeong Kwon-
dc.contributor.affiliatedAuthorKim, Soo-Won-
dc.identifier.doi10.1143/JJAP.47.5432-
dc.identifier.scopusid2-s2.0-55149113862-
dc.identifier.wosid000259550600032-
dc.identifier.bibliographicCitationJAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.7, pp.5432 - 5437-
dc.relation.isPartOfJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.citation.titleJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.citation.volume47-
dc.citation.number7-
dc.citation.startPage5432-
dc.citation.endPage5437-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusMAGNETIC-FIELD SENSOR-
dc.subject.keywordPlusXYLOPHONE BAR MAGNETOMETER-
dc.subject.keywordPlusPLANAR FLUXGATE SENSOR-
dc.subject.keywordPlusCMOS-
dc.subject.keywordAuthorMEMS-
dc.subject.keywordAuthormagnetometer-accelerometer-
dc.subject.keywordAuthorbulk-micromachining-
dc.subject.keywordAuthorLorentz force-
dc.subject.keywordAuthorsilicon-on-glass wafer-
dc.subject.keywordAuthoreutectic bonding-
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