Contact characteristics of silicon and indium tin oxide (ITO) in polysilicon thin-film transistors

Abstract

Contact-resistance reduction methods were investigated for the contact between Si layer and indium tin oxide (ITO) when the number of photolithography-mask step processes needs to be reduced in the new polycrystalline silicon thin-film-transistor (TFT) device structure. A barrier oxide has been developed for ITO/Si contact in polysilicon TFT. Titanium oxide located between Si and ITO may prevent the formation of silicon oxide that degrades the contact resistance. This method is useful for displays because it meets the requirements for the electric and optical characteristics.