Effect of growth temperature on the properties of hydrogenated Al-doped ZnO films
- Authors
- Tark, Sung Ju; Kang, Min Gu; Lim, Hee-Jin; Kim, Donghwan; Lee, Seung Hoon; Kim, Won Mok
- Issue Date
- 7월-2008
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Al-doped ZnO; rf magnetron sputter; TCO; hydrogenated
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.282 - 287
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 53
- Number
- 1
- Start Page
- 282
- End Page
- 287
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/123284
- ISSN
- 0374-4884
- Abstract
- This study examined the effect of deposition temperature on the electrical and the optical properties of thin-film hydrogenated zinc oxide doped with aluminum (AZO:H) fabricated by radio frequency magnetron sputtering using a ceramic target (98 wt.% ZnO, 2 wt.% Al2O3). Various AZO:H films were prepared on glass over a substrate temperature range from room temperature to 250 degrees C. The intentional incorporation of hydrogen was shown to play an important role in the electrical properties of the AZO:H films by increasing the free carrier concentration. The addition of 2 % (H)2 in Ar at a growth temperature of 150 degrees C produced an AZO:H film with excellent electrical properties and a resistivity of 3.21 x 10(-4) Omega.cm. The UV-measurements showed that the optical transmission of the AZO:H films was above 86 % in the visible range with a wide optical band gap.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.