Growth of boron-doped-ZnO by RF magnetron sputtering for ClGS solar cells

Abstract

The cell performance of CuIn1-x. GaxSe2 (CIGS) thin-film solar cells fabricated using boron-doped ZnO window layers was evaluated. Boron-doped ZnO was deposited by RF magnetron sputtering using a zinc-oxide target containing 3 wt.% B2O3. Its resistivity was 1.36 x 10(-2) Q-cm and its transmittance was 85 similar to 89 % in the wavelength range from 400 nm to 1000 nm. The transmittance was higher in the near-infrared region than in the other regions. Thus, boron-doped ZnO thin films would be suitable for use as transparent window layers of CIGS solar cells having a higher quantum efficiency on the near-infrared region. The FF and the conversion efficiency were obtained from the J-V measurements and their values were 0.42 and 8.15 %, respectively.