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The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

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dc.contributor.authorWon, Jae Ho-
dc.contributor.authorKim, Ki Hyun-
dc.contributor.authorSuh, Jong Hee-
dc.contributor.authorCho, Shin Hang-
dc.contributor.authorCho, Pyong Kon-
dc.contributor.authorHong, Jin Ki-
dc.contributor.authorKim, Sun Ung-
dc.date.accessioned2021-09-09T07:36:42Z-
dc.date.available2021-09-09T07:36:42Z-
dc.date.created2021-06-10-
dc.date.issued2008-06-11-
dc.identifier.issn0168-9002-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/123383-
dc.description.abstractThe X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 mu m thickness were about 2.2 and 6.2 mu C/cm(2)/R in the ohmic-type and Schottky-type detector at 0.83 V/mu m, respectively. (C) 2008 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELSEVIER-
dc.titleThe X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Ki Hyun-
dc.identifier.doi10.1016/j.nima.2008.03.057-
dc.identifier.scopusid2-s2.0-44649145366-
dc.identifier.wosid000257529300051-
dc.identifier.bibliographicCitationNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.591, no.1, pp.206 - 208-
dc.relation.isPartOfNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT-
dc.citation.titleNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT-
dc.citation.volume591-
dc.citation.number1-
dc.citation.startPage206-
dc.citation.endPage208-
dc.type.rimsART-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaInstruments & Instrumentation-
dc.relation.journalResearchAreaNuclear Science & Technology-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryInstruments & Instrumentation-
dc.relation.journalWebOfScienceCategoryNuclear Science & Technology-
dc.relation.journalWebOfScienceCategoryPhysics, Nuclear-
dc.relation.journalWebOfScienceCategoryPhysics, Particles & Fields-
dc.subject.keywordAuthorX-ray sensitivity-
dc.subject.keywordAuthorpolycrystalline CdZnTe thick films-
dc.subject.keywordAuthorcharge carrier transport-
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