Investigation on the electric properties of Bi1.5ZnNb1.5O7 thin films grown on TiN substrate for MIM capacitors
DC Field | Value | Language |
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dc.contributor.author | Hong, Kyoung Pyo | - |
dc.contributor.author | Cho, Kyung-Hoon | - |
dc.contributor.author | Jeong, Young Hun | - |
dc.contributor.author | Nahm, Sahn | - |
dc.contributor.author | Kang, Chong-Yun | - |
dc.contributor.author | Yoon, Seok-Jin | - |
dc.date.accessioned | 2021-09-09T09:34:03Z | - |
dc.date.available | 2021-09-09T09:34:03Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-04 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/123771 | - |
dc.description.abstract | A small crystalline phase was formed in the Bi1.5ZnNb1.5O7 (BZN) film grown at 300 degrees C on TiN/SiO2/Si substrate using RF-magnetron sputtering. A 46-nm-thick BZN film exhibited a high capacitance density of 13.6 fF /mu m(2) at 100 kHz with a dielectric constant of 71, which did not change even in the gigahertz range (1-6 GHz). The quality factor was high, approximately 50, at 2.5 GHz. The leakage-current density was low, approximately 5.66 nA/cm(2), at 2 V. The quadratic voltage and temperature coefficients of capacitance were approximately 631 ppm/V-2 and 149 ppm/degrees C at 100 kHz, respectively. These results indicate that the BZN film grown on TiN substrate at 300 degrees C can be a good candidate material for metal-insulator-metal capacitors. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | DIELECTRIC-PROPERTIES | - |
dc.title | Investigation on the electric properties of Bi1.5ZnNb1.5O7 thin films grown on TiN substrate for MIM capacitors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Nahm, Sahn | - |
dc.identifier.doi | 10.1109/LED.2008.918271 | - |
dc.identifier.scopusid | 2-s2.0-41749110260 | - |
dc.identifier.wosid | 000254225800017 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.29, no.4, pp.334 - 337 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 29 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 334 | - |
dc.citation.endPage | 337 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | DIELECTRIC-PROPERTIES | - |
dc.subject.keywordAuthor | Bi1.5ZnNb1.5O7 (BZN) | - |
dc.subject.keywordAuthor | high-k | - |
dc.subject.keywordAuthor | metal-insulator-metal (MIM) capacitor | - |
dc.subject.keywordAuthor | temperature coefficient of capacitance (TCC) | - |
dc.subject.keywordAuthor | voltage coefficient of capacitance (VCC) | - |
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