Modulated structures and atomic ordering in InP(y)Sb(1-y) layers grown by organometallic vapor phase epitaxy
- Authors
- Seong, Tae-Yeon; Booker, G. Roger; Norman, Andrew G.; Stringfellow, Gerald B.
- Issue Date
- 4월-2008
- Publisher
- JAPAN SOCIETY APPLIED PHYSICS
- Keywords
- transmission electron microscopy; fine scale modulated contrast; speckled contrast; needle-like contrast; atomic ordering; InPSb; organometallic vapor phase epitaxy; spinodal decomposition; III-V compound semiconductors
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.4, pp.2209 - 2212
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 47
- Number
- 4
- Start Page
- 2209
- End Page
- 2212
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/123846
- DOI
- 10.1143/JJAP.47.2209
- ISSN
- 0021-4922
- Abstract
- Modulated structure in organometallic vapour phase epitaxially grown InPSb(001) layers has been investigated using transmission electron microscopy (TEM) and transmission electron diffraction (TED). TEM results show that a fine scale modulated contrast (15-20 nm) and a fine scale speckled contrast (similar to 5nm) are simultaneously present. In addition, a fine needle-like contrast (similar to 1.5-2.1 nm) is present. TED patterns show that ((1) over bar 11) and (1(1) over bar 1)CuPt-type ordered variants are present. Diffuse streaks along the [(1) over bar 10] direction are also observed in the [110] TED pattern and found to be associated with the needle-like contrast. A possible model involving segregation of atoms associated with rows of missing dimers in the surface reconstruction or the presence of antiphase boundaries (APBs) and domain boundaries in CuPt-type ordered regions present in the layers is suggested to explain the origin of the needle-like contrast.
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