Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts
DC Field | Value | Language |
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dc.contributor.author | Kim, Hyunsoo | - |
dc.contributor.author | Cho, Jaehee | - |
dc.contributor.author | Park, Yongjo | - |
dc.contributor.author | Seong, Tae-Yeon | - |
dc.date.accessioned | 2021-09-09T10:28:30Z | - |
dc.date.available | 2021-09-09T10:28:30Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-03-03 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/123915 | - |
dc.description.abstract | The origins of leakage currents and passivation effects of GaN-based light emitting diodes fabricated with Ag p-contacts have been investigated by electrical measurements. A significant increase in reverse leakage current is attributed to the surface migration of Ag. A passivation of mesa sidewalls by SiO2 is found to be effective in suppressing the reverse leakage. However, the passivation results in a somewhat increase in the forward leakage at moderate voltages. Such forward leakage is explained in terms of the presence of local deep-level states in p-GaN generated during SiO2 deposition, acting as a parasitic diode with a lower barrier height. (C) 2008 American Institute of Physics. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | HIGH-REFLECTANCE | - |
dc.subject | OHMIC CONTACT | - |
dc.subject | DEGRADATION | - |
dc.subject | MECHANISM | - |
dc.subject | NI/AU | - |
dc.title | Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Seong, Tae-Yeon | - |
dc.identifier.doi | 10.1063/1.2844887 | - |
dc.identifier.scopusid | 2-s2.0-40549109930 | - |
dc.identifier.wosid | 000253761500058 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.92, no.9 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 92 | - |
dc.citation.number | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HIGH-REFLECTANCE | - |
dc.subject.keywordPlus | OHMIC CONTACT | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | NI/AU | - |
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