Impurity scattering effects on transport through gate-all-around Si nanowires

Abstract

We investigate effects of impurity scattering on current-voltage characteristics in a gate-all-around Si nanowire theoretically. Using non-equilibrium. Green's function technique, the self-energy for the impurity scattering is incorporated under the self-consistent Born approximation. We show that the impurity scattering changes the electronic structure of the Si nanowire largely and, thus, results in very different current-voltage curves compared to the case of the free-impurity scattering. (C) 2007 Published by Elsevier B.V.