A compact analytical current conduction model for a depletion-mode n-type nanowire field-effect transistor with a bottom-gate structure

Abstract

A compact analytical current conduction model for depletion-mode n-type nanowire field-effect transistors ( NWFETs) with a bottom-gate structure is introduced. Our model includes the current conductions of bulk charges through the center neutral region as well as of accumulation charges through the surface accumulation region, and thus it includes all current conduction mechanisms of the NWFET operating under various bias conditions. Our model also includes surface depletion effects and series resistance effects. The NWFET model is implemented to the circuit simulator ADS, and the intrinsic part of the NWFET is developed by utilizing the symbolically defined device which is an equation-based nonlinear model. The results simulated from the newly developed NWFET model reproduce two types of the reported experimental results within a 10% error.