Optical characteristics and the linewidth enhancement factor measured from InAs/GaAs quantum dot laser diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Kyoung Chan | - |
dc.contributor.author | Han, Il Ki | - |
dc.contributor.author | Yoo, Young Chae | - |
dc.contributor.author | Lee, Jung Il | - |
dc.contributor.author | Sung, Yun Mo | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-09T10:46:38Z | - |
dc.date.available | 2021-09-09T10:46:38Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-03 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/123988 | - |
dc.description.abstract | We report the optical characteristics and the linewidth enhancement factor (a-factor) of InAs/GaAs quantum dot (QD) laser diodes (LDs) with a 5-mu m-wide stripe and 1-mm-long cavity. Continuous wave (CW) operation of the laser yielded a kink-free output power of 160 mW with an external efficiency of 0.35 W/A. The threshold current was 28 mA and the lasing occurred at 1286 nm, solely at the ground state (GS) up to a current of 345 mA, without switching to the excited state (ES). Then, to estimate the a-factor of the LDs, we investigated the differential gain and wavelength shift versus the current. The differential gain was 2.37 cm(-1)/mA at 1286 nm, and the wavelength shift was 0.00046 nm/mA, which resulted in an alpha-factor of 0.057 at 1286 nm. The a-factor decreased with increasing wavelength. To the best of our knowledge, this is the lowest value of the alpha-factor that has been reported so far, indicating that our QD-LD has excellent beam quality under high-power operation due to the elimination of the filamentation. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | ROOM-TEMPERATURE | - |
dc.subject | SEMICONDUCTOR-LASERS | - |
dc.subject | WELL LASERS | - |
dc.subject | GAIN | - |
dc.title | Optical characteristics and the linewidth enhancement factor measured from InAs/GaAs quantum dot laser diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Yun Mo | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1109/TNANO.2008.914978 | - |
dc.identifier.wosid | 000254029500009 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.7, no.2, pp.135 - 139 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.title | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.citation.volume | 7 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 135 | - |
dc.citation.endPage | 139 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | SEMICONDUCTOR-LASERS | - |
dc.subject.keywordPlus | WELL LASERS | - |
dc.subject.keywordPlus | GAIN | - |
dc.subject.keywordAuthor | differential gain | - |
dc.subject.keywordAuthor | laser diodes (LDs) | - |
dc.subject.keywordAuthor | linewidth enhancement factor | - |
dc.subject.keywordAuthor | quantum dot (QD) | - |
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