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One-step grown suspended n-type semiconducting single wall carbon nanotube field effect transistors with carbon nanotube electrodes

Authors
Lee, Yun-HiLee, Jong-HeeNoh, Ji-Young
Issue Date
28-1월-2008
Publisher
AMER INST PHYSICS
Keywords
carbon nanotube; Nano Transistor; nanoelectronics
Citation
APPLIED PHYSICS LETTERS, v.92, no.4
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
92
Number
4
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/124210
DOI
10.1063/1.2838736
ISSN
0003-6951
Abstract
The authors report on the in situ formation of n-type ferromagnetic single wall carbon nanotube field effect transistors for the first time using a rapid heating process with a continuous flow of H-2 gas under a vacuum of millitorr and their electromagnetic transport properties. The suspended n-type single wall carbon nanotube (SWNT) bridge including nanosized Fe catalyst impurities also shows gate controlled magnetic field dependent field effect behavior. The interesting features of these devices can be understood qualitatively based on the influence of the nonoxidant interface and nano Fe residing at the growth site of the SWNT bridge. (C) 2008 American Institute of Physics.
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