The effects of H-2/N-2 mixed gas-plasma pretreatment of sapphire(0001) surface on the characteristics of GaN epilayers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, J | - |
dc.contributor.author | Park, YJ | - |
dc.contributor.author | Byun, D | - |
dc.contributor.author | Kim, EK | - |
dc.contributor.author | Koh, EK | - |
dc.contributor.author | Park, IW | - |
dc.date.accessioned | 2021-09-09T12:28:06Z | - |
dc.date.available | 2021-09-09T12:28:06Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2003-02 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/124364 | - |
dc.description.abstract | The effects of plasma pretreatment on sapphire and the properties of the GaN overgrown epilayers were investigated. The sapphire surface was pretreated with H-2/N-2 mixed-plasma at 350degreesC for 30 min with fixed 50 W plasma power from which an about 2 mm thick oxygeti-deficient layer was obtained. GaN epilaver of about 4.5 mum thick were grown using a metal organic chemical vapor deposition (MOCVD) system, X-ray rocking curves and cathodoluminescence spectra of the GaN epilavers showed that the crystallinity was improved through the mixed gas-plasma pretreatment of sapphire substrate. It was found that the oxygen-deficient thin layer plays a major role in reducing crytallographic defects in the GaN epilayers. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | SUBSTRATE SURFACE | - |
dc.subject | NITRIDATION | - |
dc.subject | GROWTH | - |
dc.subject | TEMPERATURE | - |
dc.title | The effects of H-2/N-2 mixed gas-plasma pretreatment of sapphire(0001) surface on the characteristics of GaN epilayers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Byun, D | - |
dc.identifier.wosid | 000181337500083 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S446 - S449 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 42 | - |
dc.citation.startPage | S446 | - |
dc.citation.endPage | S449 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | SUBSTRATE SURFACE | - |
dc.subject.keywordPlus | NITRIDATION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | H-2/N-2 mixed gas plasma | - |
dc.subject.keywordAuthor | oxygen-deficient thin layer | - |
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