Effects of N+-implanted sapphire (0001) substrate on GaN epilayer
- Authors
- Cho, YS; Koh, EK; Park, YJ; Koh, D; Kim, EK; Moon, Y; Leem, SJ; Kim, G; Byun, D
- Issue Date
- 3월-2002
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- characterization; metal-organic chemical vapor deposition; nitrides
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.236, no.4, pp.538 - 544
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 236
- Number
- 4
- Start Page
- 538
- End Page
- 544
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/124386
- DOI
- 10.1016/S0022-0248(02)00840-0
- ISSN
- 0022-0248
- Abstract
- We have investigated the effects of N--implanted sapphire (0 0 0 1) substrate on a GaN epilaver grown by metalorganic chemical vapor deposition (MOCVD). As a result of implantation with 55 keV nitrogenions (N+) to a dose ranging from 1 x 10(5) to 1 X 10(17)cm(-2) prior to GaN epilayer growth. the N+-implanted sapphire surface was chemophysically modified and a thin disordered AIN phase was observed. The N--implanted substrate's surface had decreased internal free energies during the growth of the GaN epilayer, and the misfit strain was relieved through the formation of an AIN phase on the N+ -implanted sapphire (0 0 0 1) substrate. Crystallographical and optical properties of GaN epilayer grown on N+-implanted sapphire (0 0 0 1) substrate with the ion dose of 1 X 10(16)cm(-2) were found to be improved. indicating decreased internal stress and generation of dislocations in the GaN epilayer. The present results show that N--implantation pre-treatment of the sapphire (0 0 0 1) substrate surface can be used to improve the properties of GaN epilayers grown by MOCVD. (C) 2002 Elsevier Science B.V. All rights reserved.
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