Microtunneling sensors for vacuum level evaluation of field emission display devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, HW | - |
dc.contributor.author | Ju, BK | - |
dc.contributor.author | Park, YK | - |
dc.contributor.author | Lee, DJ | - |
dc.contributor.author | Lee, YH | - |
dc.contributor.author | Kim, CJ | - |
dc.contributor.author | Park, JH | - |
dc.contributor.author | Oh, MH | - |
dc.date.accessioned | 2021-09-09T12:34:29Z | - |
dc.date.available | 2021-09-09T12:34:29Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2001-03 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/124399 | - |
dc.description.abstract | In this article, the laterally tunneling diodes and triodes were fabricated with the general second polysilicon layer surface micromachining process. The thickness of each structural polysilicon and sacrificial phosphosilicate glass layer was 2 mum, respectively. By removing the sacrificial layer with the sublimation drying method, the stiction was avoided. Their emission characteristics were tested in a high vacuum chamber with probes. Current-voltage characteristics were tested under various vacuum environments and the simulation was done to know the electric field distribution near the tip end. They were then used as a vacuum level evaluation sensor. The sensor showed the emission current variation in the range of 1.20-2.42 muA for the vacuum range of 10(-5)-10(-8) Torr. (C) 2001 American Vacuum Society. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.subject | PRESSURE SENSOR | - |
dc.subject | STICTION | - |
dc.subject | RELEASE | - |
dc.title | Microtunneling sensors for vacuum level evaluation of field emission display devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, JH | - |
dc.identifier.doi | 10.1116/1.1352724 | - |
dc.identifier.scopusid | 2-s2.0-0035273004 | - |
dc.identifier.wosid | 000168308200038 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.19, no.2, pp.542 - 545 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 19 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 542 | - |
dc.citation.endPage | 545 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PRESSURE SENSOR | - |
dc.subject.keywordPlus | STICTION | - |
dc.subject.keywordPlus | RELEASE | - |
dc.subject.keywordAuthor | microtunneling sensor | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.