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Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots

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dc.contributor.authorJung, SK-
dc.contributor.authorSong, SH-
dc.contributor.authorHwang, SW-
dc.contributor.authorPark, JH-
dc.contributor.authorKim, Y-
dc.contributor.authorKim, EK-
dc.date.accessioned2021-09-09T12:37:43Z-
dc.date.available2021-09-09T12:37:43Z-
dc.date.created2021-06-18-
dc.date.issued1999-12-
dc.identifier.issn0921-4526-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/124417-
dc.description.abstractWe fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot. (C) 1999 Elsevier Science B.V. All rights reserved.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherELSEVIER-
dc.subjectROOM-TEMPERATURE-
dc.subjectTRANSISTOR-
dc.subjectSPECTROSCOPY-
dc.subjectINGAAS-
dc.titleFabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots-
dc.typeArticle-
dc.contributor.affiliatedAuthorPark, JH-
dc.identifier.doi10.1016/S0921-4526(99)00342-7-
dc.identifier.scopusid2-s2.0-0033328757-
dc.identifier.wosid000084375600007-
dc.identifier.bibliographicCitationPHYSICA B-CONDENSED MATTER, v.272, no.1-4, pp.18 - 20-
dc.relation.isPartOfPHYSICA B-CONDENSED MATTER-
dc.citation.titlePHYSICA B-CONDENSED MATTER-
dc.citation.volume272-
dc.citation.number1-4-
dc.citation.startPage18-
dc.citation.endPage20-
dc.type.rimsART-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusTRANSISTOR-
dc.subject.keywordPlusSPECTROSCOPY-
dc.subject.keywordPlusINGAAS-
dc.subject.keywordAuthorplanar device-
dc.subject.keywordAuthorself-assembled quantum dot-
dc.subject.keywordAuthorresonant tunneling-
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