Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, BH | - |
dc.contributor.author | Jung, SK | - |
dc.contributor.author | Kim, SI | - |
dc.contributor.author | Hwang, SW | - |
dc.contributor.author | Park, JH | - |
dc.contributor.author | Kim, Y | - |
dc.contributor.author | Kim, EK | - |
dc.contributor.author | Min, SK | - |
dc.date.accessioned | 2021-09-09T12:39:08Z | - |
dc.date.available | 2021-09-09T12:39:08Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 1998-12 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/124425 | - |
dc.description.abstract | Electrical properties of the electron-beam induced cal bon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | JAPAN J APPLIED PHYSICS | - |
dc.title | Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, JH | - |
dc.identifier.doi | 10.1143/JJAP.37.6996 | - |
dc.identifier.scopusid | 2-s2.0-19644391422 | - |
dc.identifier.wosid | 000078699200066 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.37, no.12B, pp.6996 - 6997 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | - |
dc.citation.volume | 37 | - |
dc.citation.number | 12B | - |
dc.citation.startPage | 6996 | - |
dc.citation.endPage | 6997 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | electron-beam | - |
dc.subject.keywordAuthor | carbon | - |
dc.subject.keywordAuthor | current-voltage | - |
dc.subject.keywordAuthor | nano-devices | - |
dc.subject.keywordAuthor | single electron tunneling | - |
dc.subject.keywordAuthor | Coulomb staircases | - |
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